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Hot selling high-pressure N-channel IGBT field-effect transistor NCE2025I TO-251
Manufacturer
Manufacturer Product Number
NCE2025I
Description
IGBT N-channel high-voltage field-effect transistor
Package Condition
TUBE
| Part# | NCE2025I |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 20 |
| ID(A) | 25 |
| VTH(V) | 0.7 |
| RDS(ON)@4.5VTyp(mΩ) | 9 |
| QG(nC) | 15 |
| PD(W) | 40 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE2025I.pdf
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IGBT N-channel high-voltage field-effect transistor
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