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Hot selling product NCE30H11BG high-pressure N-channel IGBT field-effect transistor, original stock DFN8
Manufacturer
Manufacturer Product Number
NCE30H11BG
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE30H11BG |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN5X6-8L |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 110 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 2.3 |
| RDS(ON)@4.5VTyp(mΩ) | 3.8 |
| QG(nC) | 66.3 |
| PD(W) | 68 |
Product Data Book：https://allnewsemi.shop/img/cms/NCE30H11BG.pdf
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high-voltage N-channel IGBT field-effect transistor
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