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Professional supply Integrated circuit FDMS86252 N-Channel 150 V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN
FDMS86252 Series 150 V 51 mOhm N-Channel Shielded Gate PowerTrench Mosfet
Product Descriptions
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Features
Max rDS(on) = 51mΩ at VGS = 10V, ID = 4.6A
Max rDS(on) = 70mΩ at VGS = 6V, ID = 3.9A
Advanced package and silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL testedRoHS Compliant General Description
Product Applications
DC-DC Conversion
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-FDMS86252 |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | onsemi |
Series | PowerTrench® |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Digi-Reel® | |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 51mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 75 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6) |
Package / Case | 8-PowerTDFN |
Base Product Number | FDMS86 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
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Standard packaging
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