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Hot selling product original supply NCE01P18D TO-263 high-voltage P-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE01P18D
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE01P18D |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -100 |
| ID(A) | -18 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 85 |
| RDS(ON)@4.5VTyp(mΩ) | 95 |
| QG(nC) | 70 |
| PD(W) | 70 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE01P18D.pdf
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high-voltage P-channel IGBT field-effect transistor
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