Hot sale Original IPP65R150CFDAAKSA1 Transistors MOSFET N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3

Product Overview 

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 614 mJ.A device's maximum input capacitance is 2340pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.

Product Features  

the avalanche energy rating (Eas) is 614 mJ

a continuous drain current (ID) of 22.4A

based on its rated peak drain current 72A.

Product Applications

There are a lot of Infineon Technologies

IPP65R150CFDAAKSA1 applications of single MOSFETs transistors.

Power Tools

Motor Drives and Uninterruptible Power Supples

Synchronous Rectification

Battery Protection Circuit

Telecom 1 Sever Power Supplies

Industrial Power Supplies

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

DC-to-DC converters

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