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Hot sale Original NTTFS5116PLTWG Transistor MOSFET(Metal Oxide) P-Channel 60 V 5.7A (Ta) 3.2W (Ta) 40W (Tc) Surface Mount 8-WDFN
Manufacturer
Manufacturer Product Number
NTTFS5116PLTWG
Description
Original NTTFS5116PLTWG Transistor MOSFET(Metal Oxide) P-Channel 60 V 5.7A (Ta) 3.2W (Ta) 40W (Tc) Surface Mount 8-WDFN
Package Condition
Original
Product Overview
NTTFS5116PLTWG is an N-channel power PFET MOSFET transistor from the manufacturer of ON Semiconductor with a voltage of 60V. The operating temperature of NTTFS5116PLTWG is -55°C~175°C TJ and its maximum power dissipation are 40W. NTTFS5116PLTWG has 8 pins and it is available in Tape & Reel (TR) packaging way. The FET Type of IRFP7430PBF is P-Channel and its Rise Time is 58ns.
Product Features
Low RDS(on)
Fast Switching
These Devices are Pb?Free and are RoHS Compliant
Product Applications
Load Switches
DC Motor Control
DC?DC Conversion
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - NTTFS5116PLTWG |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
- |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
60 V |
|
Current - Continuous Drain (Id) @ 25°C |
5.7A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
52mOhm @ 6A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
25 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1258 pF @ 30 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
3.2W (Ta), 40W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
8-WDFN (3.3x3.3) |
|
Package / Case |
8-PowerWDFN |
|
Base Product Number |
NTTFS5116 |
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Product datasheet
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Original NTTFS5116PLTWG Transistor MOSFET(Metal Oxide) P-Channel 60 V 5.7A (Ta) 3.2W (Ta) 40W (Tc) Surface Mount 8-WDFN
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