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You can contact me for the best price Electronic Components Irfp064 Mosfet N-Ch 55V 110A To-247Ac Irfp064n
Manufacturer Product Number
IRFP064N
Description
IRFP064N Power Field-Effect Transistor 110A I(D) 55V 0.008ohm 1-Element N-Channel
Package Condition
Original
Datasheet
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Product Details
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Product Description
| Type# | Description |
| Part# | IRFP064N |
| Manufacturer | / |
| Package Description | TO-247AC, 3 PIN |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 480 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 110 A |
| Drain-source On Resistance-Max | 0.008 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 390 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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IRFP064N Power Field-Effect Transistor 110A I(D) 55V 0.008ohm 1-Element N-Channel
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