Electronic components &Bom
Hot sale Original SI9945BDY-T1-GE3 Transistor MOSFET 2N-CH 60V 5.3A Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
$0.70
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
high-voltage N-channel IGBT field-effect transistor
Part# | NCE0102E |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | SOT23 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 100 |
ID(A) | 2 |
VTH(V) | 1.8 |
RDS(ON)@10VTyp(mΩ) | 195 |
RDS(ON)@4.5VTyp(mΩ) | 240 |
QG(nC) | 11.3 |
PD(W) | 1.25 |
Product Data Book:https://allnewsemi.shop/img/cms/NCE0102E.pdf
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