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NCE15TD60BD TO-263 high-voltage N-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE15TD60BD
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE15TD60BD |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 15 |
| PD(W)25℃ | 126 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| SwitchingFrequency | 0~60KHz |
| Tsc(us) | 5 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE15TD60BD.pdf
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high-voltage N-channel IGBT field-effect transistor
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