Image shown is a representation only.

Exact specifications should be obtained from the product data sheet.

NCE6010J DFN6 chip high-voltage N-channel IGBT field-effect transistor available in stock

Manufacturer
NCE
Manufacturer Product Number
NCE6010J
Description

high-voltage N-channel IGBT field-effect transistor

Package Condition
Tape and Reel
Part# NCE6010J
Type: high-voltage N-channel IGBT field-effect transistor
Manufactor NCE
DC NEW
Describe DFN6
Supplier Device Packaging REEL
Technology Trench
Polarity N
BVDSS(V) 60
ID(A) 10
VTH(V) 1.3
RDS(ON)@10VTyp(mΩ) 24.5
RDS(ON)@4.5VTyp(mΩ) 30.5
QG(nC) 25.3
PD(W) 3
PKG /

Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE6010J.pdf

Write your review

NCE6010J DFN6 chip high-voltage N-channel IGBT field-effect transistor available in stock

high-voltage N-channel IGBT field-effect transistor

Write your review

Other Products In The same category:

50000In stock:
Can ship immediately
QUANTITY
All prices are in USD

Factory packaging/ANSC packaging

Quantity Price You Save
100 $0.44 Up to $0.00
5000 $0.41 Up to $150.00
10000 $0.40 Up to $400.00

SEND
RFQ