Hot-selling and scarce BLF4G10LS-120 UHF power LDMOS transistor SMD spot stock

Product Descriptions

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Product Features

■  Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA

◆ Load power = 48 W (AV)

◆ Gain = 19 dB (typ)

◆ Efficiency = 40 % (typ)

◆ ACPR 400 = −61 dBc (typ)

◆ ACPR 600 = −72 dBc (typ)

◆ EVMrms = 1 .5 % (typ)

■  Easy power control

■  Excellent ruggedness

■  High efficiency

■  Excellent thermal stability

■  Designed for broadband operation (800 MHz to 1000 MHz)

■  Internally matched for ease of use

Product Applications

■  RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 868 MHz to 961 MHz frequency range.

Product Photos

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