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Hot-selling and scarce SIHP5N50D-GE3 N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB spot stock

Manufacturer Product Number
SIHP5N50D-GE3
Description

SIHP5N50D-GE3 N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB spot stock

Package Condition
Tube
Datasheet
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​Product Features

• Optimal design

- Low area specific on-resistance

- Low input capacitance (Ciss)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

- Simple gate drive circuitry

- Low figure-of-merit (FOM): Ron x Qg

- Fast switching

Product Applications

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

Product Specifications

Attribute Attribute value
ANSM-Part# ANSM-SIHP5N50D-GE3
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP5

Product Photos

SIHP5N50D-GE3

For more product information, please download the PDF

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Hot-selling and scarce SIHP5N50D-GE3 N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB spot stock

SIHP5N50D-GE3 N-Channel 500 V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB spot stock

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