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Hot-selling and scarce IRFR4104PBF N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) spot stock
IRFR4104PBF N-Channel 40 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) spot stock
Product Descriptions
This MOSFET utilizes the latestprocessing techniques to achieve extremely low onresistance per silicon area.Additional features of thisdesign are a 175°C junction operating temperature,fastswitchingspeedandimproved repetitiveavalancherating .These features combine to make this designan extremely efficient and reliable device for use in awide variety of applications .
Product Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-IRFR4104PBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Discontinued at DigiKey |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Product Photos

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