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Hot sale Original 2N7002 Transistor Small Signal Field-Effect Transistor 0.3A I(D) 60V 1-Element N-Channel Silicon FET TO-236AB
Manufacturer Product Number
2N7002
Description
Original 2N7002 Transistor Small Signal Field-Effect Transistor 0.3A I(D) 60V 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-236AB
Package Condition
Original
Datasheet
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Product Details
DESCRIPTION
The 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
Product Description
| Type# | Description |
| ANSC PART# | ANSC - 2N7002 |
| Manufacturer | / |
| Package Description | SOT-23, 3 PIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 0.3 A |
| Drain-source On Resistance-Max | 5 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 10 pF |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -65 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.83 W |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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Original 2N7002 Transistor Small Signal Field-Effect Transistor 0.3A I(D) 60V 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-236AB
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