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Hot selling product, original supply, high-voltage N+P-channel IGBT MOS tube NCE60NP2012K TO252
Manufacturer
Manufacturer Product Number
NCE60NP2012K
Description
high-voltage N+P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
Part# | NCE60NP2012K |
Type: | high-voltage N+P-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO252 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N+P |
BVDSS(V) | -60 |
ID(A) | -12 |
VTH(V) | -1.5 |
RDS(ON)@10VTyp(mΩ) | 84 |
RDS(ON)@4.5VTyp(mΩ) | 100 |
QG(nC) | 37.6 |
PD(W) | 50 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE60NP2012K.pdf
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