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Trench's hot selling dual core product NCE30ND35Q high-voltage N+N channel IGBT field-effect transistor, original and spot DFN8
Manufacturer
Manufacturer Product Number
NCE30ND35Q
Description
high-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE30ND35Q |
| Type： | High-voltage N+N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN3X3-8L |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+N |
| BVDSS(V) | 30 |
| ID(A) | 30 |
| VTH(V) | 1.4 |
| RDS(ON)@10VTyp(mΩ) | 9 |
| RDS(ON)@4.5VTyp(mΩ) | 11.5 |
| QG(nC) | 17 |
| PD(W) | 30 |
Product Data Book：https://allnewsemi.shop/img/cms/NCE30ND35Q.pdf
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high-voltage N+N-channel IGBT field-effect transistor
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