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Trench's hot selling dual core product NCE30ND35Q high-voltage N+N channel IGBT field-effect transistor, original and spot DFN8

Manufacturer
NCE
Manufacturer Product Number
NCE30ND35Q
Description

high-voltage N+N-channel IGBT field-effect transistor

Package Condition
Tape and Reel
Part# NCE30ND35Q
Type： High-voltage N+N-channel IGBT field-effect transistor
Manufactor NCE
DC NEW
Describe DFN3X3-8L
Supplier Device Packaging REEL
Technology Trench dual core
Polarity N+N
BVDSS(V) 30
ID(A) 30
VTH(V) 1.4
RDS(ON)@10VTyp(mΩ) 9
RDS(ON)@4.5VTyp(mΩ) 11.5
QG(nC) 17
PD(W) 30

Product Data Book：https://allnewsemi.shop/img/cms/NCE30ND35Q.pdf

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Trench's hot selling dual core product NCE30ND35Q high-voltage N+N channel IGBT field-effect transistor, original and spot DFN8

high-voltage N+N-channel IGBT field-effect transistor

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