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Hot selling product NCE30P55L TO251S original stock high-voltage P-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE30P55L
Description
High-voltage P-channel IGBT field-effect transistors
Package Condition
TUBE
NCE30NP4030G | NCE30P55L |
Type: | High-voltage P-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO-251S |
Supplier Device Packaging | TUBE |
Technology | Trench |
Polarity | P |
BVDSS(V) | -30 |
ID(A) | -55 |
VTH(V) | -1.5 |
RDS(ON)@10VTyp(mΩ) | 6.8 |
RDS(ON)@4.5VTyp(mΩ) | 10 |
QG(nC) | 71 |
PD(W) | 110 |
Product Data Book: https://allnewsemi.shop/img/cms/NCE30P55L.pdf
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