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NCE609 TO252 High voltage N+P channel IGBT field-effect transistor for spot sale
Manufacturer
Manufacturer Product Number
NCE609
Description
high-voltage N+P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE609 |
| Type： | NCE N+P -Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N+P |
| BVDSS(V) | -40 |
| ID(A) | -14 |
| VTH(V) | -1.5 |
| RDS(ON)@10VTyp(mΩ) | 29 |
| RDS(ON)@4.5VTyp(mΩ) | 35 |
| QG(nC) | 21 |
| PD(W) | 40 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE609.pdf
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high-voltage N+P-channel IGBT field-effect transistor
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