Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
IC chip high-voltage N-channel IGBT MOS transistor NCEP11N10AK TO252 hot selling spot original
Manufacturer
Manufacturer Product Number
NCEP11N10AK
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCEP11N10AK |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | SGT-II |
| Polarity | N |
| BVDSS(V) | 100 |
| ID(A) | 55 |
| VTH(V) | 1.7 |
| RDS(ON)@10VTyp(mΩ) | 11.5 |
| RDS(ON)@4.5VTyp(mΩ) | 14 |
| QG(nC) | 42 |
| PD(W) | 80 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCEP11N10AK.pdf
.png)
Other Products In The same category:
high-voltage N-channel IGBT field-effect transistor
50000In stock:
Can ship immediately