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Hot sale Original NJVMJD31CT4G Transistors Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Manufacturer Product Number
NJVMJD31CT4G
Description

Original NJVMJD31CT4G Transistors Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Description

The NJVMJD31CT4G is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for a wide range of applications. This single-transistor device features a collector-base voltage of 100V, collector-emitter breakdown voltage of 100V, and collector-emitter voltage of 40V, making it suitable for use in automotive and industrial applications.

Product Features  

High collector-base voltage (VCBO) and collector-emitter breakdown voltage (BVCEO) of 100V

Low collector-emitter voltage (VCEO) of 40V

High DC current gain (hFE) of 10

Operating temperature range of -65°C to 150°C (TJ)

Surface mount package (TO-252-3, DPak, SC-63)

Lead-free and RoHS3 compliant

Automotive-grade (AEC-Q101) and suitable for industrial applications

Product Applications

Automotive applications, such as engine management systems, anti-lock braking systems, and power windows

Industrial applications, such as motor control, power supplies, and lighting systems

General-purpose applications, such as amplifiers, oscillators, and switches

Product Description

ANSC PART#

 ANSC- NJVMJD31CT4G

Part#

NJVMJD31CT4G

Type

Transistors

Manufactor

Original

DC

new

Part Status

Active

Product images

8804.jpg

Product Attributes

Type

Description

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

Mfr

onsemi

Series

-

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

3 A

Voltage - Collector Emitter Breakdown (Max)

100 V

Vce Saturation (Max) @ Ib, Ic

1.2V @ 375mA, 3A

Current - Collector Cutoff (Max)

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 1A, 4V

Power - Max

1.56 W

Frequency - Transition

3MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Grade

Automotive

Qualification

AEC-Q101

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Base Product Number

NJVMJD31

Product datasheet   

For more information, please download

image

image

image   

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original NJVMJD31CT4G Transistors Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Original NJVMJD31CT4G Transistors Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.56 W Surface Mount DPAK

Write your review

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