Image shown is a representation only.

Exact specifications should be obtained from the product data sheet.

High voltage P-channel IGBT MOS transistor NCE2333Y hot selling spot product SOT23 chip

Manufacturer
NCE
Manufacturer Product Number
NCE2333Y
Description

High-voltage P-channel IGBT field-effect transistor

Package Condition
Tape and Reel
Part# NCE2333Y
Type: NCE P-Channel Enhancement Mode Power MOSFET
Manufactor NCE
DC NEW
Describe SOT-23
Supplier Device Packaging REEL
Technology Trench
Polarity P
BVDSS(V) -12
ID(A) -6
VTH(V) -0.7
RDS(ON)@4.5VTyp(mΩ) 19
QG(nC) 12
PD(W) 1.8
PKG /

Product Data Book:https://allnewsemi.shop/img/cms/NCE2333Y.pdf

Write your review

High voltage P-channel IGBT MOS transistor NCE2333Y hot selling spot product SOT23 chip

High-voltage P-channel IGBT field-effect transistor

Write your review

Other Products In The same category:

50000In stock:
Can ship immediately
QUANTITY
All prices are in USD

Factory packaging/ANSC packaging

Quantity Price You Save
100 $0.44 Up to $0.00
5000 $0.41 Up to $150.00
10000 $0.40 Up to $400.00

SEND
RFQ