Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Original high-voltage N+N channel IGBT MOS transistor NCE6802 SOT23 chip sold in stock
Manufacturer
Manufacturer Product Number
NCE6802
Description
High-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE6802 |
| Type： | NCE N+N-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | SOT-23 |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+N |
| BVDSS(V) | 30 |
| ID(A) | 3.5 |
| VTH(V) | 1.5 |
| RDS(ON)@10VTyp(mΩ) | 36 |
| RDS(ON)@4.5VTyp(mΩ) | 59 |
| QG(nC) | 4 |
| PD(W) | 1.2 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE6802.pdf
.jpg)
.png)
Other Products In The same category:
High-voltage N+N-channel IGBT field-effect transistor
50000In stock:
Can ship immediately