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BOM allocation service NCEP60T12K TO252 high-voltage N-channel IGBT MOS transistor chip original stock
Manufacturer
Manufacturer Product Number
NCEP60T12K
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCEP60T12K |
| Type： | NCE N-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | SGT-I |
| Polarity | N |
| BVDSS(V) | 60 |
| ID(A) | 120 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 3.6 |
| QG(nC) | 51.4 |
| PD(W) | 140 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCEP60T12K.pdf
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high-voltage N-channel IGBT field-effect transistor
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