Electronic components &Bom
Hot sale original SI9945BDY-T1-GE3 MOSFET 2N-CH 60V 5.3A 8SOIC Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
$0.70
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
High-voltage N-channel IGBT field-effect transistors
Part# | NCE65T680I |
Type: | High-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO-251 |
Supplier Device Packaging | TUBE |
Technology | SJ-Ⅲ |
Polarity | N |
BVDSS(V) | 650 |
ID(A) | 7 |
VTH(V) | 3.5 |
RDS(ON)@10VTyp(mΩ) | 600 |
PD(W) | 60 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE65T680I.pdf
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