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High voltage N-channel IGBT MOS transistor stock supply of original NCEP01T13D TO263 chip
Manufacturer
Manufacturer Product Number
NCEP01T13D
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
Part# | NCEP01T13D |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TO-263 |
Supplier Device Packaging | TUBE |
Technology | SGT-I |
Polarity | N |
BVDSS(V) | 100 |
ID(A) | 135 |
VTH(V) | 3.3 |
RDS(ON)@10VTyp(mΩ) | 3.7 |
QG(nC) | 100 |
PD(W) | 220 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCEP01T13D.pdf
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50000In stock:
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