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NCE2010E TSSOP8 High voltage N+N channel IGBT field-effect transistor chip original stock supply
Manufacturer
Manufacturer Product Number
NCE2010E
Description
High Voltage N+N-Channel IGBT Field Effect Transistor
Package Condition
Tape and Reel
Part# | NCE2010E |
Type: | high-voltage N+N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | TSSOP8 |
Supplier Device Packaging | REEL |
Technology | Trench dual core |
Polarity | N+N |
BVDSS(V) | 20 |
ID(A) | 7 |
VTH(V) | 0.7 |
RDS(ON)@4.5VTyp(mΩ) | 13 |
QG(nC) | 15 |
PD(W) | 1.5 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE2010E.pdf
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