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Hot sale Original MMBFJ177LT1G Transistors JFET P-CH 30V SOT23-3 P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)
Original MMBFJ177LT1G Transistors JFET P-CH 30V SOT23-3 P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)
Product Description
The MMBFJ177LT1G is a surface-mount, P-channel depletion-mode junction field-effect transistor (JFET) designed for use in a variety of applications. This transistor features a breakdown voltage of 30V, a continuous drain current of 20mA, and a maximum power dissipation of 225mW. The MMBFJ177LT1G is packaged in a TO-236-3, SC-59, or SOT-23-3 package and is available in a tape and reel format.
Product Features
Breakdown voltage of 30V
Continuous drain current of 20mA
Maximum power dissipation of 225mW
Operating temperature range of -55°C to 150°C
Halogen-free and lead-free
RoHS3 compliant
Radiation-hardening not available
Radiation-hardening not available
Product Applications
Primary applications: Chopper circuits, audio amplifiers, and power supplies
Secondary applications: Switching circuits, motor control, and power conversion
Product Description
| Type | Description |
| ANSC PART# | ANSC- MMBFJ177LT1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| JFETs | |
| Manufacturer | - |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V (VGS) |
| Resistance - RDS(On) | 300 Ohms |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMBFJ177 |
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