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Hot selling product NCE30D0808J DFN6 chip, high-voltage N+N-channel IGBT MOS tube, sold in stock with original packaging
Manufacturer Product Number
NCE30D0808J
Description
high-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
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| Part# | NCE30D0808J |
| Type： | high-voltage N+N-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | DFN6 |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+N |
| BVDSS(V) | 30 |
| ID(A) | 8 |
| VTH(V) | 1.5 |
| RDS(ON)@10VTyp(mΩ) | 22 |
| RDS(ON)@4.5VTyp(mΩ) | 28 |
| QG(nC) | 12 |
| PD(W) | 2 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE30D0808J.pdf
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high-voltage N+N-channel IGBT field-effect transistor
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