Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
High voltage N-channel IGBT MOS transistor NCE3013J DFN6 for original supply of chips in stock
Manufacturer
Manufacturer Product Number
NCE3013J
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
Part# | NCE3013J |
Type: | high-voltage N-channel IGBT field-effect transistor |
Manufactor | NCE |
DC | NEW |
Describe | DFN6 |
Supplier Device Packaging | REEL |
Technology | Trench |
Polarity | N |
BVDSS(V) | 30 |
ID(A) | 13 |
VTH(V) | 1.6 |
RDS(ON)@10VTyp(mΩ) | 9.5 |
RDS(ON)@4.5VTyp(mΩ) | 15 |
QG(nC) | 24 |
PD(W) | 3 |
PKG | / |
Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE3013J.pdf
Other Products In The same category:
50000In stock:
Can ship immediately