Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Hot selling One stop supply of electronic components 2N6661 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 90V 350mA 6.25W TO-39
2N6661 Series 90 V 350mA N-Channel Enhancement-Mode Vertical DMOS FET- TO-39
Product Descriptions
2N6661 is an enhancement-mode (normally-off) tran-sistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-bination produces a device with the power-handlingcapabilities of bipolar transistors, and the high inputimpedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway andthermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where very-low threshold voltage, high breakdown voltage, high-input impedance, low-input capacitance, and fastswitching speeds are desired.
Product Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low Css and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Product Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lampsmemories, displays, bipolar transistors, etc.
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-2N6661 |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | Microchip Technology |
Series | - |
Package | Bag |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 90 V |
Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 24 V |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
We also provide :
Part No | Manufacturer | Date Code | Quantity | Description |
LM22676ADJ | NS | 19+ | 250 | SOP8 |
TPS562201DDCR | TI | 22+ | 795500 | SOT23-6 |
NJG1806K75 | JRC | 22+ | 500000 | DFN6 |
TLV74318PDQNR | TI | 22+ | 402000 | X2SON-4 |
NJG1801K75 | JRC | 22+ | 300000 | SMD |
NJG1804K64 | JRC | 22+ | 300000 | DFN8 |
LM27761DSGR | TI | 22+ | 151000 | WSON8 |
TLV62565DBVR | TI | 22+ | 138000 | SOT23-5 |
TPS613222ADBVR | TI | 22+ | 108000 | SOT23-5 |
LNK625DG-TL | POWER | 22+ | 100000 | SOP-8 |
OPA4322AIPWR | TI | 22+ | 100000 | TSSOP14 |
TLV75528PDRVR | TI | 22+ | 99000 | WSON-6 |
TPS7A2025PDQNR | TI | 22+ | 78500 | X2SON-4 |
TLV62568DBVR | TI | 22+ | 72000 | SOT23-5 |
STM32L051K8U6TR | ST | 22+ | 60000 | QFN32 |
SKY66421-11 | SKYWORKS | 22+ | 56500 | QFN16 |
TPS7A1111PDRVR | TI | 22+ | 54000 | WSON6 |
TLV62569PDDCR | TI | 22+ | 52000 | SOT23-6 |
TLV62569DBVR | TI | 22+ | 48000 | SOT23-5 |
TPS23753APWR | TI | 22+ | 40000 | TSSOP14 |
NB691GG-Z | MPS | 22+ | 30000 | QFN |
SN74AHC1G02DBVR | TI | 22+ | 27939 | SOT-23 |
TPS63000DRCR | TI | 22+ | 23238 | VSON10 |
TLV75533PDRVR | TI | 22+ | 21500 | WSON6 |
NB687BGQ-Z | MPS | 22+ | 20000 | QFN |
A3916GESTR-T-1 | ALLEGRO | 22+ | 17150 | QFN-20 |
TPS62135RGXR | TI | 22+ | 15000 | VQFN11 |
TLE2022AMDR | TI | 0803+ | 12500 | SOP8 |
TPS23756PWPR | TI | 22+ | 12000 | HTSSOP-20 |