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Hot selling One stop supply of electronic components 2N6661 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 90V 350mA 6.25W TO-39

Manufacturer
Manufacturer Product Number
2N6661
Description

2N6661 Series 90 V 350mA N-Channel Enhancement-Mode Vertical DMOS FET- TO-39

Package Condition
BAG
Datasheet

Product Descriptions

2N6661 is an enhancement-mode (normally-off) tran-sistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-bination produces a device with the power-handlingcapabilities of bipolar transistors, and the high inputimpedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway andthermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where very-low threshold voltage, high breakdown voltage, high-input impedance, low-input capacitance, and fastswitching speeds are desired.

Product Features

• Free from secondary breakdown

• Low power drive requirement

• Ease of paralleling

• Low Css and fast switching speeds

• Excellent thermal stability

• Integral source-drain diode

• High input impedance and high gain

Product Applications

• Motor controls

• Converters

• Amplifiers

• Switches

• Power supply circuits

• Drivers: relays, hammers, solenoids, lampsmemories, displays, bipolar transistors, etc.

Specifications

Attribute Attribute value
ANSM-Part# ANSM-2N6661
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Microchip Technology
Series -
Package Bag
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 90 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 24 V
FET Feature -
Power Dissipation (Max) 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-39
Package / Case TO-205AD, TO-39-3 Metal Can

Actual product photos

2N6661

Product Data Book:

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For more product information, please download the PDF

Payment&Transportation

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

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Standard packaging

详情9

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Hot selling One stop supply of electronic components 2N6661 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 90V 350mA 6.25W TO-39

2N6661 Series 90 V 350mA N-Channel Enhancement-Mode Vertical DMOS FET- TO-39

Write your review

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