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Hot sale Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Manufacturer
Manufacturer Product Number
IRFB4227PBF
Description
Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Package Condition
Tube
Product Description
The IRFB4227PBF is a 200V single N-channel HEXFET? Power MOSFET PDP switch for plasma display panels that can be used for sustain, energy recovery, and pass switching. It achieves a low on-resistance per silicon area and an EPULSE rating by incorporating the most up-to-date approaches.
Product Features
● High Repetitive Peak Current Capability for Reliable Operation
● Short Fall & Rise Times for Fast Switching
● 175°C Operating Junction Temperature for Improved Ruggedness
● Repetitive Avalanche Capability for Robustness and Reliability
● Class-D Audio Amplifier 300W-500W (Half-bridge)
● Advanced Process Technology
● Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
● Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
● Low QG for Fast Respon
Product Applications
● Power Management
● Industrial
● DC-DC Converters
● Motor Control
● Automotive Applications
Product Description
|
ANSC PART# |
ANSC- IRFB4227PBF |
|
Part# |
IRFB4227PBF |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
HEXFET® |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
200 V |
|
Current - Continuous Drain (Id) @ 25°C |
65A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
24mOhm @ 46A, 10V |
|
Vgs(th) (Max) @ Id |
5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
98 nC @ 10 V |
|
Vgs (Max) |
±30V |
|
Input Capacitance (Ciss) (Max) @ Vds |
4600 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
330W (Tc) |
|
Operating Temperature |
-40°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220AB |
|
Package / Case |
TO-220-3 |
|
Base Product Number |
IRFB4227 |
Product datasheet
For more information, please download
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Other Products In The same category:
Original IRFB4227PBF Transistors MOSFET N-CH 200V 65A TO220AB N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
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