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Hot sale Original STD4N52K3 Transistors MOSFET N-CH 525V 2.5A DPAK N-Channel 525 V 2.5A (Tc) 45W (Tc) Surface Mount

Manufacturer
STM
Manufacturer Product Number
STD4N52K3
Description

Original STD4N52K3 Transistors MOSFET N-CH 525V 2.5A DPAK N-Channel 525 V 2.5A (Tc) 45W (Tc) Surface Mount

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Overview 

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 334pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.5A.With a drain-source breakdown voltage of 525V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 525V.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.

Product Features  

a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 525V voltage

Product Applications

There are a lot of STMicroelectronics
STD4N52K3 applications of single MOSFETs transistors.

· Lighting

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

 

Product Description

ANSC PART#

 ANSC- STD4N52K3

Part#

STD4N52K3

Type

Transistor

Manufactor

Original

DC

new

Part Status

Active

Product images

7554.jpg

Product Attributes

Type

Description

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

STMicroelectronics

Series

SuperMESH3™

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

525 V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

2 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

334 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

STD4

Product datasheet   

For more information, please download

image

image

image   

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original STD4N52K3 Transistors MOSFET N-CH 525V 2.5A DPAK N-Channel 525 V 2.5A (Tc) 45W (Tc) Surface Mount

Original STD4N52K3 Transistors MOSFET N-CH 525V 2.5A DPAK N-Channel 525 V 2.5A (Tc) 45W (Tc) Surface Mount

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