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Hot sale Original JANTX2N6788 Power Field-Effect Transistor 6A I(D) 100V 0.35ohm 1-Element N-Channel
Manufacturer Product Number
JANTX2N6788
Description
JANTX2N6788 Transistor 6A I(D) 100V 0.35ohm 1-Element N-Channel
Package Condition
Bulk
Datasheet
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Product Details
Description
The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Hermetically Sealed
• Simple Drive Requirements
• ESD Rating: Class 1B per MIL-STD-750, Method 1020
Product Description
| Type# | Description |
| ANSC PART# | ANSC - JANTX2N6788 |
| Ihs Manufacturer | / |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN |
| Reach Compliance Code | unknown |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 0.242 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 6 A |
| Drain-source On Resistance-Max | 0.35 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 20 W |
| Power Dissipation-Max (Abs) | 20 W |
| Pulsed Drain Current-Max (IDM) | 24 A |
| Qualification Status | Not Qualified |
| Reference Standard | MIL-19500/555 |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 110 ns |
| Turn-on Time-Max (ton) | 110 ns |
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Product datasheet
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JANTX2N6788 Transistor 6A I(D) 100V 0.35ohm 1-Element N-Channel
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