Hot sale Original NVMFS5826NLWFT1G Transistors N-Channel 60 V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Manufacturer

Manufacturer Product Number

NVMFS5826NLWFT1G

Description

NVMFS5826NLWFT1G Transistors N-Channel 60 V 8A (Ta) 3.6W (Ta), 39W (Tc) Surface Mount 5-DFN

Package Condition

Tape & Reel (TR)

Datasheet

NVMFS5826NLWFT1G

Product Details
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Product Details

Power MOSFET

40 V, 6.9 m, 44 A, Dual N−Channel Logic Level, Dual SO−8FL

Features

• Small Footprint (5x6 mm) for Compact Designs

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• NVMFD5852NLWF − Wettable Flanks Option for Enhanced Optical Inspection

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

Product Description

Type#	Description
ANSC PART#	ANSC- NVMFS5826NLWFT1G
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	/
Series	-
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25掳C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads
Base Product Number	NVMFS5826

Actual image of the product

NVMFS5826NLWFT1G

Product datasheet

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