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Hot sale Original JANTXV2N6788 Transistors MOSFET N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)

Manufacturer
Manufacturer Product Number
JANTXV2N6788
Description

Original JANTXV2N6788 Transistors MOSFET N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)

Package Condition
Bulk

Product Overview 

 

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 0.242 mJ.The drain current is the maximum continuous current this device can conduct, which is 6 A.Pulsed drain current is maximum rated peak drain current 24 A.A normal operation of the DS requires keeping the breakdown voltage above 100 V.

Product Features  

the avalanche energy rating (Eas) is 0.242 mJ

based on its rated peak drain current 24 A.

Product Applications

 

There are a lot of Infineon

JANTXV2N6788 applications of single MOSFETs transistors.

 

 

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

DC/DC converters

Power Tools

Motor Drives and Uninterruptible Power Supples

Synchronous Rectification

Battery Protection Circuit

Telecom 1 Sever Power Supplies

Industrial Power Supplies

PFC stages, hard switching PWM stages and resonant switching

Product Description

ANSC PART#

 ANSC- JANTXV2N6788

Part#

JANTXV2N6788

Type

Transistors

Manufactor

Original

DC

new

Part Status

Active

Product images

40284.jpg

Product Attributes

Type

Description

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Microsemi Corporation

Series

-

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 10 V

Vgs (Max)

±20V

FET Feature

-

Power Dissipation (Max)

800mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Grade

Military

Qualification

MIL-PRF-19500/555

Mounting Type

Through Hole

Supplier Device Package

TO-205AF (TO-39)

Package / Case

TO-205AF Metal Can

Product datasheet   

For more information, please download

image

image

image   

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original JANTXV2N6788 Transistors MOSFET N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)

Original JANTXV2N6788 Transistors MOSFET N-Channel 100 V 6A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)

Write your review

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