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Exact specifications should be obtained from the product data sheet.
High quality sales of NE02135 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
RF Bipolar Transistors MICRO-X NPN HI-FREQ
Product Features
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain Compression
Product DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications.
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-NE02135 |
Manufacturer: | CEL |
Product Category: | RF Bipolar Transistors |
RoHS: | N |
Transistor Type: | Bipolar |
Technology: | Si |
Transistor Polarity: | NPN |
Operating Frequency: | 4.5 GHz |
Emitter- Base Voltage VEBO: | 3 V |
Continuous Collector Current: | 70 mA |
Minimum Operating Temperature: | - 65 C |
Maximum Operating Temperature: | + 200 C |
Configuration: | Single |
Brand: | CEL |
Collector- Base Voltage VCBO: | 25 V |
DC Current Gain hFE Max: | 20 at 20 mA at 10 V |
Pd - Power Dissipation: | 500 mW (1/2 W) |
Product Type: | RF Bipolar Transistors |
Factory Pack Quantity: | 200 |
Subcategory: | Transistors |
Type: | RF Bipolar Small Signal |
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Product Data Book:
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