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Hot sale Original 2N1613 TRANS NPN 50V 0.5A Bipolar (BJT) Transistor NPN 50V 500 mA 80MHz 800 mW Through Hole TO-39
2N1613 Transistor TRANS NPN 50V 0.5A TO-39
Product Details
Brief Description: The 2N1613 is a NPN bipolar junction transistor (BJT) .
It is a single-element, through-hole mounted device with a TO-39 package.
Features:
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Collector-base voltage (VCBO): 75V
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Collector-emitter breakdown voltage (VCEO): 50V
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Collector-emitter saturation voltage (VCE(sat)): 1.5V
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Continuous collector current (IC): 500mA
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DC current gain (hFE): 20 (minimum)
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Frequency - transition: 60MHz
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Gain bandwidth product: 60MHz
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Power dissipation (max): 3W
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Operating temperature range: -65°C to 150°C
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Package: TO-39
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Terminal finish: Tin/Lead (Sn/Pb)
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RoHS compliant
Application Grade:
The 2N1613 is designed for general-purpose switching applications.
Applications:
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Switching circuits
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Amplifiers
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Oscillators
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Logic circuits
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Power control circuits
This transistor is suitable for a wide range of applications, including audio amplifiers, power supplies, and motor control circuits. Its high-frequency performance and high-power dissipation make it an excellent choice for high-speed switching and power control applications.
Product Description
| Type | Description |
| PART# | 2N1613 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | / |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Power - Max | 800 mW |
| Frequency - Transition | 80MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Base Product Number | 2N16 |
Actual image of the product