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Hot offer 30 V N-channel Trench MOSFET BOM distribution service electronic components PMV40UN2R New Original
Manufacturer Product Number
PMV40UN2R
Description
PMV40UN2R Transistors N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Datasheet
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Product Details
| Brief Description: The PMV40UN2R is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a built-in diode, designed for switching applications. It features a high-temperature range of 150°C and is packaged in a surface-mount TO-236-3 (SC-59, SOT-23-3) package. Features: High-temperature range: 150°C Single N-channel MOSFET with built-in diode Continuous drain current: 3.7A Drain-to-source breakdown voltage: 30V Drive voltage: 1.8V to 4.5V Gate charge: 12nC at 4.5V Gate-to-source voltage: 12V Input capacitance: 635pF at 15V Power dissipation: 490mW Rds on: 44mΩ at 3.7A, 4.5V Threshold voltage: 400mV Turn-on delay time: 9ns Turn-off delay time: 34ns Vgs (max): ±12V Vgs(th) (max): 900mV at 250μA Application Grade: The PMV40UN2R is designed for high-temperature applications, making it suitable for use in automotive, industrial, and aerospace systems. Applications: Switching applications Power management Motor control LED lighting Power supplies Automotive systems Industrial control systems Aerospace systems Overall, the PMV40UN2R is a high-temperature, single N-channel MOSFET with a built-in diode, designed for switching applications in harsh environments. Its high-temperature range and low Rds on make it suitable for use in a variety of applications, including automotive, industrial, and aerospace systems. |
Product Description
| Type# | Description |
| PART# | PMV40UN2R |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | / |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 3.7A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 490mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | PMV40UN2 |
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PMV40UN2R Transistors N-Channel 30 V 3.7A (Ta) 490mW (Ta) Surface Mount TO-236AB
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