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MOSFET P-CH 20V 2.4A MICRO6P-Channel 20 V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
Manufacturer
Manufacturer Product Number
IRFAE50
Description
MOSFET P-CH 20V 2.4A MICRO6P-Channel 20 V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6) IRFAE50
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Details
IRFAE50 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 830 mJ.There is a peak drain current of 28 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.
IRFAE50 Features
the avalanche energy rating (Eas) is 830 mJ
based on its rated peak drain current 28 A.
IRFAE50 Applications
There are a lot of Infineon
IRFAE50 applications of single MOSFETs transistors.
-
DC/DC converters
-
Power Tools
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Motor Drives and Uninterruptible Power Supples
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Synchronous Rectification
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Battery Protection Circuit
-
Telecom 1 Sever Power Supplies
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Industrial Power Supplies
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PFC stages, hard switching PWM stages and resonant switching
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PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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Lighting, Server, Telecom and UPS.
Product Description
|
ANSC PART# |
ANSC- IRFAE50 |
|
Part# |
IRFAE50 |
|
Type： |
Transistors |
|
Manufactor |
Infineon Technologies |
|
DC |
new |
|
Package / Case |
SOT-23-6 |
|
Supplier Device Package |
Tape & Reel (TR)Cut Tape (CT) |
Product Attributes
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-204AA-2 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Id - Continuous Drain Current: | 7.1 A |
| Rds On - Drain-Source Resistance: | 1.4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 150 W |
| Channel Mode: | Enhancement |
| Brand: | Infineon / IR |
| Configuration: | Single |
| Fall Time: | 24 ns |
| Height: | 7.74 mm |
| Length: | 39.37 mm |
| Product Type: | MOSFET |
| Rise Time: | 68 ns |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 78 ns |
| Typical Turn-On Delay Time: | 32 ns |
| Width: | 25.53 mm |
| Unit Weight: | 0.229281 oz |
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MOSFET P-CH 20V 2.4A MICRO6P-Channel 20 V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6) IRFAE50
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