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NCE30D2519K TO252 chip high-voltage N+P-channel IGBT MOS transistor for sale in stock
Manufacturer
Manufacturer Product Number
NCE30D2519K
Description
high-voltage N+P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE30D2519K |
| Type： | NCE N+P-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N+P |
| BVDSS(V) | -30 |
| ID(A) | -19 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 29 |
| RDS(ON)@4.5VTyp(mΩ) | 48 |
| QG(nC) | 16.2 |
| PD(W) | 21 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE30D2519K.pdf
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high-voltage N+P-channel IGBT field-effect transistor
50000In stock:
Can ship immediately