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Professional supply Original Integrated circuit IC MG150Q2YS40 N CHANNEL IGBT Power Module

Manufacturer Product Number
MG150Q2YS40
Description

MG150Q2YS40 150 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor

Package Condition
Original
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Product Details

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High Power Switching applications
Motor Control Applications
High input impedance
High speed : tf = 0.5µs (max)
trr = 0.5µs (max)
Low saturation voltage
: VCE (sat) = 4.0V (max)
Enhancement-mode
Includes a complate half bridge in one package.
The electrodes are isolated from case.

Product Description

Type# Description
ANSC PART# ANSC- MG150Q2YS40
Ihs Manufacturer Original
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Additional Feature HIGH SPEED
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1100 W
Power Dissipation-Max (Abs) 1100 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V

Product Photos

MG150Q2YS40  

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Professional supply Original Integrated circuit IC MG150Q2YS40 N CHANNEL IGBT Power Module

MG150Q2YS40 150 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor

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