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Hot selling product original stock FMND1G08U3D-IF 3.3V/1.8V, x8/x16 1G-BIT NAND FLASH IC CHIP VFBGA67
FMND1G08U3D-IF-Internal buffer to improve the program throughput,Fast data copy without external buffering
Product Features
■ X8/X16 I/O BUS
- NAND Interface
- ADDRESS / DATA Multiplexing
■ SUPPLY VOLTAGE
- VCC = 1.8/2.7/3.3 Volt core supply voltage for
Program, Erase and Read operations
■ PAGE READ / PROGRAM
- x8: (2048+64 spare) byte
- x16: (1024+32 spare) word page
- Synchronous Page Read Operation
- Random access: 25us (Max)
- Serial access: 45ns (1.8V)
25ns (2.7/3.3V)
- Page program time: 200us (Typ)
■ PAGE COPY BACK
- Fast data copy without external buffering
■ CACHE PROGRAM
- Internal buffer to improve the program throughput
■ READ CACHE
■ LEGACY/ONFI 1.0 COMMAND SET
■ FAST BLOCK ERASE
- Block size:
x8: (128K + 4K) bytes
x16: (64K+2K) words
- Block erase time: 2ms (Typ)
■ MEMORY CELL ARRAY
- x8: (2K + 64) bytes x 64 pages x 1024 blocks
-x16: (1K + 32) words x 64 pages x 1024 blocks
■ ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
■ DATA RETENTION
- 100K Cycling Program / Erase cycles
- Data retention: 10 Years (4bit/512byte ECC)
- Block zero is a valid block and will be valid for at least
1K program-erase cycles with ECC
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-FMND1G08U3D-IF |
Type: | PPI NAND |
Manufactor | Dosilicon |
DC | Standard |
Describe | NEW |
Supplier Device Packaging | VFBGA67 |
Package | TRAY |
Density | 1Gb |
Voltage (V) | 3.3 |
Speed (MHz/CLK) | 25ns |
Temp.Range | -40℃~85℃ |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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