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71V67703S75PFG8 Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect QFP spot stock

Manufacturer Product Number
71V67703S75PFG8
Description

71V67703S75PFG8 Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

Package Condition
Tape & Reel (TR)
Datasheet
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Product Descriptions

The IDT71V67703/7903 are high-speed SRAMs organized as 256K x 36/512K x 18. The IDT71V67703/7903 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.

The burst mode feature offers the highest level of performance to the system designer, as the IDT71V67703/7903 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will flowthrough from the array after a clock-to-data access time delay from the rising clock edge of the same cycle. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin.

The IDT71V67703/7903 SRAMs utilize a high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA).

Product Features

◆ 256K x 36, 512K x 18 memory configurations

◆ Supports fast access times:

– 7.5ns up to 117MHz clock frequency

– 8.0ns up to 100MHz clock frequency

– 8.5ns up to 87MHz clock frequency

◆ LBO input selects interleaved or linear burst mode

◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)

◆ 3.3V core power supply

◆ Power down controlled by ZZ input

◆ 3.3V I/O supply (VDDQ)

◆ Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

◆ Green parts available, see ordering information


Product Specification

Attribute Attribute value
ANSM-Part# ANSM-71V67703S75PFG8
Category Integrated Circuits (ICs)
Memory
Memory
Mfr -
Packaging Tape & Reel (TR)
Part Status Obsolete
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 117 MHz
Access Time 7.5 ns
Voltage - Supply 3.135V ~ 3.465V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 100-LQFP
Supplier Device Package 100-TQFP (14x14)
Base Product Number 71V67703

Product Photos

71V67703S75PFG8

For more product information, please download the PDF

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71V67703S75PFG8 Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect QFP spot stock

71V67703S75PFG8 Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs

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