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Hot-selling and scarce MT47H128M8CF-25EIT:H DDR2 SDRAM BGA spot stock
MT47H128M8CF-25EIT:H DDR2 SDRAM BGA spot stock
Product Features
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-MT47H128M8CF-25E IT:H |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | - |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
| Base Product Number | MT47H128M8 |
Product Photos

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