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Hot-selling and scarce K4T51163QJ-BCE7 512Mb J-die DDR2 SDRAM IC BGA spot stock

Manufacturer Product Number
K4T51163QJ-BCE7
Description

K4T51163QJ-BCE7 512Mb J-die DDR2 SDRAM IC BGA spot stock

Package Condition
Tray
Datasheet
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Product Descriptions

The 512Mb DDR2 SDRAM is organized as a 8Mbit x16 I/Os,16Mbit x8 I/Os,  32Mbit x4 I/Os 4banks device. This synchronous device achieves high  speed double-data-rate transfer rates of up to 1066Mb/sec/pin (DDR2- 1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency  -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a  pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address  information in a RAS/CAS multiplexing style. For example, 512Mb(x8)  device receive 14/10/2 addressing.

The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply  and 1.8V ± 0.1V VDDQ.

The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball  FBGAs(x16)

Product Features

• JEDEC standard VDD = 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin and 533MHz fCK for 1066Mb/sec/pin

• 4 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6

• Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/Nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Special Function Support

-50ohm ODT

-High Temperature Self-Refresh rate enable

• Average Refresh Period for commecial temp.: 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C,

• All of products are Lead-Free, Halogen-Free, and RoHS compliant

Product Photos

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For more product information, please download the PDF

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Hot-selling and scarce K4T51163QJ-BCE7 512Mb J-die DDR2 SDRAM IC BGA spot stock

K4T51163QJ-BCE7 512Mb J-die DDR2 SDRAM IC BGA spot stock

Write your review

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