Hot-selling and scarce MT28F008B3VG-9BF FLASH MEMORY IC TSOP40 spot stock

Product Descriptions

The MT28F008B3  (x8) and MT28F800B3  (x16/x8) are low-voltage,nonvolatile,electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage  of either  3.3V  or  5V,  while  all  operations  are performed with  a  3.3V VCC.  Due  to  process  technology advances,5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm  CMOS floating-gate process.

The  MT28F008B3  and  MT28F800B3  are  organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite,  the  devices  feature  a  hardware-protected boot block. This block maybe used to store code implemented  in  low-level  system  recovery.  The  remaining blocks vary in density and are written and erased with no  additional  security measures.

Product Features

•   Eleven  erase  blocks:

16KB/8K-word boot block  (protected)

Two 8KB/4K-word parameter blocks

Eight main memory blocks

•   Smart 3 technology  (B3):

3.3V ±0 .3V VCC

3.3V ±0.3V VPP  application programming

5V ±10% VPP  application/production programming1

•   Compatible with 0.3µm Smart 3 device

•   Advanced  0.18µm  CMOS  floating-gate  process

•   Address  access time: 90ns

•   100,000  ERASE  cycles

•   Industry-standard  pinouts

•   Inputs  and  outputs  are  fully TTL-compatible

•   Automated write  and erase  algorithm

•   Two-cycle  WRITE/ERASE  sequence

•   TSOP, SOP and FBGA packaging options

•   Byte-  or  word-wide  READ  and  WRITE (MT28F800B3):

1 Meg x 8/512K x 16

Product Photos

For more product information, please download the PDF