Hot-selling and scarce N25Q016A11E5140F Flash Memory IC spot stock

Product Features

108 MHz (MAX) clock frequency

1.7–2.0V single supply voltage

Dual/quad I/O instruction provides increased throughput up to 432 MB/s

Supported protocols

–   Extended SPI, dual I/O, and quad I/O

Execute-in-place (XIP) mode for all three protocols

–   Configurable via volatile or nonvolatile registers

–   Enables memory to work in XIP mode directly af-ter power-on

PROGRAM/ERASE SUSPEND operations

Continuous read of entire memory via a single command

–   Fast read

–   Quad or dual output fast read

–   Quad or dual I/O fast read to fit application

–   Configurable number of dummy cycles

–   Output buffer configurable

Hardware RESET function available upon customer request

64-byte, user-lockable, one-time programmable(OTP) dedicated area

–   Subsector erase 4KB uniform granularity blocks

–   Subsector erase 32KB uniform granularity blocks

–   Sector erase 64KB uniform granularity blocks

Deep power-down mode: 5µA (TYP)

Write protection

–   Software write protection applicable to every

64KB sector via volatile lock bit

–   Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2,and TB)

–  Additional smart protections, available upon request

Electronic signature

–   JEDEC-standard 2-byte signature (BB15h)

–   Two additional extended device ID (EDID) bytes to identify device factory options

–   Unique ID code (UID): 14 read-only bytes

Minimum 100,000 ERASE cycles per sector

More than 20 years data retention

Packages JEDEC standard, all RoHS compliant

–   F4 = U-PDFN-8/4mm x 3mm (MLP8)

–   F6 =V-PDFN-8/6mm x 5mm (MLP8)

–   SC = SOP2-8/150 mil (SO8N)

–   51 =XF-SCSP-8/2mm x 2 .8mm (XFCSP)

Product Photo

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