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Hot-selling and scarce PC28F512P33EFA FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA spot stock
PC28F512P33EFA FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA spot stock
Product Features
• High performance
• Easy BGA package features
– 95ns initial access for 512Mb, 1Gb Easy BGA
– 100ns initial access for 2Gb Easy BGA
– 25ns 16-word asychronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode
– 4-, 8-, 16-, and continuous word options for burst mode
• TSOP package features
– 105ns initial access for 512Mb, 1Gb TSOP
• Both Easy BGA and TSOP package features
– Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer
– 3.0V buffered programming at 1.46 MB/s (TYP) using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Symmetrically blocked architecture (512Mb, 1Gb,2Gb)
– Asymmetrically blocked architecture (512Mb,1Gb); four 32KB parameter blocks: top or bottom configuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– VCC (core) voltage: 2.3–3.6V
– VCCQ (I/O) voltage: 2.3–3.6V
– Standy current: 70µA (TYP) for 512Mb; 75µA(TYP) for 1Gb
– 52 MHz continuous synchronous read current:21mA (TYP), 24mA (MAX)
•Security
– One-time programmable register: 64 OTP bits, programmed with unique information from Micron; 2112 OTP bits available for customer programming
– Absolute write protection:V PP =V SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
•Software
– 25μs (TYP) program suspend
– 25μs (TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function Inter -face (EFI) command set compatible
– Common flash interface
•Density and Packaging
– 56-lead TSOP package (512Mb, 1Gb)
– 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)
– 16-bit wide data bus
•Quality and reliabilty
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-PC28F512P33EFA |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | - |
| Series | Axcell™ |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 52 MHz |
| Write Cycle Time - Word, Page | 95ns |
| Access Time | 95 ns |
| Voltage - Supply | 2.3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-TBGA |
| Supplier Device Package | 64-EasyBGA (8x10) |
| Base Product Number | PC28F512 |
Product Photos
For more product information, please download the PDF