Hot-selling and scarce MT40A256M16GE-083E:B SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 96-FBGA spot stock

​Product Features

• VDD = VDDQ = 1.2V ±60mV

• VPP = 2.5V, –125mV/+250mV

• On-die, internal, adjustable VREFDQ generation

• 1.2V pseudo open-drain I/O

• TC of 0°C to 95°C

– 64ms, 8192-cycle refresh at 0°C to 85°C

– 32ms at 85°C to 95°C

• 16 internal banks (x4, x8): 4 groups of 4 banks each

• 8 internal banks (x16): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Programmable data strobe preambles

• Data strobe preamble training

• Command/Address latency (CAL)

• Multipurpose register READ and WRITE capability

• Write and read leveling

• Self refresh mode

• Low-power auto self refresh (LPASR)

• Temperature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maximum power saving

• Output driver calibration

• Nominal, park, and dynamic on-die termination (ODT)

• Data bus inversion (DBI) for data bus

• Command/Address (CA) parity

•  Databus write cyclic redundancy check (CRC)

•  Per-DRAM addressability

•  Connectivity test (x16)

•  Post package repair (PPR) and soft post package repair (sPPR) modes

•  JEDEC JESD-79-4 compliant

Product Specifications

Product Photos

For more product information, please download the PDF