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Hot sale Original SKM200GAL12E4 Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Manufacturer
Manufacturer Product Number
SKM200GAL12E4
Description
SKM200GAL12E4 Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Package Condition
Bulk
Product Details
SKM200GAL12E4
Features
IGBT4 = 4th generation medium fast trench IGBT (Infineon)
CAL4 = Soft switching 4th generation CAL-diode
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
Increased power cycling capability
With integrated gate resistor
For higher switching frequencies up to 12kHz
UL recognized, file no. E63532
Target Applications
DC/DC – converter
Brake chopper
Switched reluctance motor
Product Description
|
ANSC PART# |
ANSC- SKM100GAL12T4 |
|
Part# |
SKM100GAL12T4 |
|
Type： |
Electronic components |
|
Manufactor |
Semikron |
|
DC |
new |
Actual image of the product
Product datasheet
For more information, please download
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Other Products In The same category:
SKM200GAL12E4 Insulated Gate Bipolar Transistor, 314A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
10In stock:
Can ship immediately